Resonant cavity enhanced image sensor
US11152411B2 · kind B2 · utility
0Cited by
4References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 24, 2018 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Jun 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
The semiconductor image sensor device comprises a semiconductor layer having a main surface and an opposite rear surface, and a charge carrier generating component at the main surface. The charge carrier generating component is arranged between a top reflecting layer and a bottom reflecting layer, which are arranged outside the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.