Image sensor

US11152412B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Laurent Frey · Fontaine, FR
• Yvon Cazaux · Grenoble, FR

Key dates

• Filing date: Dec 18, 2019
• Grant date: Oct 19, 2021
• Expiry date: Apr 26, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8063

Abstract

An image sensor including a plurality of pixels, each including: a semiconductor photodetection region; a metal region arranged on a first surface of the semiconductor region; a band-pass or band elimination interference filter arranged on a second surface of the semiconductor region opposite to the first surface; and between the semiconductor region and the metal region, a portion of the absorbing layer made of a material different from that of the semiconductor region, the absorbing layer being capable of absorbing, in a single passage, more than 30% of an incident radiation at the central wavelength of the pass band or of the stop band of the interference filter.