Cross-point spin-transfer torque magnetoresistive memory array and method of making the same

US11152425B2 · kind B2 · utility

Assignee

• Western Digital Technologies, Inc. · US

Inventors

• Lei Wan · Beijing, CN
• Jordan Asher Katine · Mountain View, US
• Tsai-Wei Wu · San Jose, US

Key dates

• Filing date: Oct 29, 2019
• Grant date: Oct 19, 2021
• Expiry date: Oct 29, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

A memory device includes a cross-point array of spin-torque transfer MRAM cells. First rail structures laterally extend along a first horizontal direction. Each of the first rail structures includes a vertical stack including, from bottom to top, a first electrically conductive line, a reference layer having a fixed magnetization direction, and a tunnel barrier layer. Second rail structures laterally extend along a second horizontal direction. Each of the second rail structures includes a second electrically conductive line that overlies the first rail structures. A two-dimensional array of pillar structures is located between a respective one of the first rail structures and a respective one of the second rail structures. Each of the pillar structures includes a free layer having energetically stable magnetization orientations that are parallel or antiparallel to the fixed magnetization direction.