Patent · US Active

Semiconductor nanocrystal structure and optoelectronic device

US11152463B2 · kind B2 · utility

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19Claims
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Inventors

Key dates

Filing dateMar 18, 2020
Grant dateOct 19, 2021
Priority date
Expiry dateApr 9, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K59/38
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A semiconductor nanocrystal structure may include a core, an inner absorption shell surrounding the core, at least one emission shell surrounding the inner absorption shell, and an outer absorption shell surrounding the emission shell(s). The core may include a different material than the optional inner absorption shell and/or the outer absorption shell. The core may be less absorbent to electromagnetic radiation as compared to the optional inner absorption shell and/or the outer absorption shell. An optoelectronic device may include the semiconductor nanocrystal structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.