Methods of fabricating field-effect transistors
US11152504B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2018 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Jun 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating a field-effect transistor, where the methods include providing a substrate, forming a first well of a first doping polarity type in the substrate, and forming a gate on a portion of the first well, the gate comprising an oxide layer and an at least partially conductive layer on the oxide layer. A second well of a second doping polarity type is formed by implanting ions in the first well, the second well extending under a portion of the gate. A first one of a source and drain of the first doping polarity type in or on the second well is formed, thereby defining a channel of the transistor under the gate. A second one of the source and drain of the first doping polarity type in or on the first well is formed. The second well may be formed by means of a two-step implant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.