Light transmissive electrode for light emitting devices
US11152587B2 · kind B2 · utility
1Cited by
35References
19Claims
0Family size
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Key dates
| Filing date | Aug 15, 2017 |
| Grant date | Oct 19, 2021 |
| Priority date | — |
| Expiry date | Oct 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An opto-electronic device includes: (1) a first electrode; (2) at least one semiconductor layer disposed over the first electrode, the semiconductor layer including an emissive layer; and (3) a second electrode disposed over the semiconductor layer. The second electrode includes a fullerene-containing magnesium alloy which includes a non-zero amount of a fullerene of up to about 15 vol. % of the fullerene, and the second electrode has a thickness of about 50 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.