INP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light

US11152763B2 · kind B2 · utility

Assignee

• TAIYUAN UNIVERSITY OF TECHNOLOGY · CN

Inventors

• Mingjiang Zhang · Taiyuan, CN
• Jianzhong Zhang · Plano, US
• Ya'nan Niu · Taiyuan, CN
• Yi Liu · Hengshan, TW
• Tong Zhao · Eden Prairie, US
• Lijun Qiao · Changchun, CN
• Anbang Wang · Shanghai, CN
• Yuncai Wang · Taiyuan, CN

Key dates

• Filing date: Aug 27, 2018
• Grant date: Oct 19, 2021
• Expiry date: Jan 5, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/34306
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An InP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light, being composed of six regions: a left DFB semiconductor laser, a bidirectional SOA, a left passive optical waveguide region, a doped passive optical waveguide region, a right passive optical waveguide region, and a right DFB semiconductor laser, specifically including: an N+ electrode layer, an N-type substrate, an InGaAsP lower confinement layer, an undoped InGaAsP multiple quantum well active region layer, doped particles, distributed feedback Bragg gratings, an InGaAsP upper confinement layer, a P-type heavily doped InP cover layer, a P-type heavily doped InGaAs contact layer, a P+ electrode layer, a light-emitting region, and isolation grooves. It effectively solves problems of bulky volume of the existing chaotic laser source, the time-delay signature of chaotic laser, narrow bandwidth, and low coupling efficiency of the light and the optical waveguide.