Semiconductor structures and fabrication method thereof
US11158533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2018 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | Feb 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is provided. The semiconductor structure includes a substrate, a first trench, and a second trench. The substrate has a first region and a second region. The first trench is formed in the substrate within the first region. The first trench is surrounded by a first protrusion structure having a top portion and sidewalls. The second trench is formed in the substrate within the second region. The second trench is surrounded by a second protrusion structure having a top portion and sidewalls. The second trench is deeper than the first trench. The connection portion between the top portion and the sidewalls of the second protrusion structure has a greater radius of curvature than the connection portion between the top portion and the sidewalls of the first protrusion structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.