Ray detector array substrate, manufacturing method thereof, and ray detector
US11158657B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 24, 2019 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | Jun 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A method for manufacturing a ray detector array substrate is provided, comprising: forming a thin film transistor, a first data line and a receiving electrode on a base substrate; forming a first passivation layer on the base substrate; forming a first via hole and a second via hole in regions of the first passivation layer corresponding to the first data line and the receiving electrode, respectively; forming a photoelectric conversion layer covering the first passivation layer on the base substrate, the first via hole and the second via hole being filled with a material of the photoelectric conversion layer; etching the photoelectric conversion layer to retain a first portion of the photoelectric conversion layer inside the first via hole, and a second portion of the photoelectric conversion layer above and corresponding to the second via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.