Sensors and electronic devices
US11158676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2020 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | Feb 12, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.