High voltage semiconductor device including a doped gate electrode
US11158720B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2019 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | Aug 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0156
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high voltage semiconductor device includes a semiconductor region of a first conductivity type having a first region and a second region, a first insulation pattern disposed over the first region of the semiconductor region. A second insulation pattern is disposed over the second region of the semiconductor region. The second insulation pattern has a thickness greater than a thickness of the first insulation pattern. A gate electrode is disposed over the first and second insulation patterns to have a step structure over a boundary region between the first and second regions. The gate electrode has a doping profile such that a position of a maximum projection range of impurity ions distributed in the gate electrode over the first region is located at substantially the same level as a position of a maximum projection range of impurity ions distributed in the gate electrode over the second region. A top surface of the gate electrode over the second region is located at a level higher than a level of a top surface of the gate electrode over the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.