LDMOS component, manufacturing method therefor, and electronic device
US11158737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2018 |
| Grant date | Oct 26, 2021 |
| Priority date | — |
| Expiry date | Aug 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/603
Abstract
Provided in the present invention are an LDMOS component, a manufacturing method therefor, and an electronic device, comprising: a semiconductor substrate (100); a drift area (101) provided in the semiconductor substrate; a gate electrode structure (103) provided on a part of the surface of the semiconductor substrate and covers a part of the surface of the drift area; a source electrode (1052) and a drain electrode (1051) respectively provided in the semiconductor substrate on either side of the gate electrode structure, where the drain electrode is provided in the drift area and is separated from the gate electrode structure; a metal silicide barrier layer (106) covering the surface of at least a part of the semiconductor substrate between the gate electrode structure and the drain electrode; and a first contact hole (1081) provided on the surface of at least a part of the metal silicide barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.