Thermal processing method for silicon wafer
US11162191B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Mar 23, 2017 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Aug 3, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A processing temperature TS by a rapid thermal processing furnace is 1250° C. or more and 1350° C. or less, and a cooling rate Rd from the processing temperature is in a range of 20° C./s or more and 150° C./s or less, and thermal processing is performed by adjusting the processing temperature TS and the cooling rate Rd within a range between the upper limit P=0.00207TS·Rd−2.52Rd+13.3 (Formula (A)) and the lower limit P=0.000548TS·Rd−0.605Rd−0.511 (Formula (B)) of an oxygen partial pressure P in a thermal processing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.