Photodetection circuit with extended hold-off time for SPAD quench assistance
US11162839B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2020 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Oct 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K3/037
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photodetection circuit includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage supply through a quench resistance and an anode coupled to a first node, a capacitive deep trench isolation capacitor coupled between the first node and ground, and a first n-channel transistor. The first n-channel transistor has a drain coupled to the first node, a source coupled to ground, and a gate coupled to a resistance control signal. A second n-channel transistor has a drain coupled to the first node, a source coupled to ground, and a gate coupled to a second node. An inverter has an input coupled to the first node and an output coupled to an intermediate node. A current starved inverter has an input coupled to the intermediate node and an output coupled to the second node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.