Non-volatile storage system with fast SLC operation
US11164634B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2019 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Sep 30, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage system comprises a controller connected to blocks of non-volatile memory cells. The memory cells can be operated as single level cell (“SLC”) memory cells or multi-level cell (“MLC”) memory cells. To increase write performance for a subset of memory cells being operated as SLC memory cells, the controller performs a deeper erase process and a weaker program process for the subset of memory cells. The weaker program process results in a programmed threshold voltage distribution that is lower than the “nominal” programmed threshold voltage distribution. Having a lower programmed threshold voltage distribution reduces the magnitude of the programming and sensing voltages needed and, therefore, shortens the time required to generate the programming and sensing voltages, and reduces power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.