Systems and methods for hardening flash memory to radiation
US11164642B1 · kind B1 · utility
4Cited by
12References
2Claims
0Family size
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Key dates
| Filing date | Feb 11, 2019 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Feb 11, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3495
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for radiation hardening flash memory performs accelerated aging on the flash memory by program-erase (PE) cycling the flash memory. Such accelerated aging induces trap states in the tunnel oxide layer of the flash memory, which results in improved ionizing radiation tolerance. The number of cycles used to harden a given memory cell is optimally determined in order to limit effects of the radiation hardening on the reliability of the cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.