Method of manufacturing semiconductor device
US11164775B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2020 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | May 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes depositing a first insulation film in a via hole of a semiconductor substrate and above a first surface thereof, the semiconductor substrate having a circuit substrate on a second surface thereof, depositing a second insulation film having a covering property lower than the first insulation film in the via hole and above the first surface, and removing the first and second insulation films deposited at the bottom of the via hole by anisotropic etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.