Patent · US Active

Method for manufacturing a capacitive element having electrical coupling the first electrode to the active region

US11164875B2 · kind B2 · utility

1Cited by
0References
18Claims
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Assignee

Inventor

Key dates

Filing dateFeb 27, 2020
Grant dateNov 2, 2021
Priority date
Expiry dateFeb 27, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/661

Abstract

A capacitive element is located in an active region of the substrate and on a front face of the substrate. The capacitive element includes a first electrode and a second electrode. The first electrode is formed by a first conductive region and the active region. The second electrode is formed by a second conductive region and a monolithic conductive region having one part covering a surface of said front face and at least one part extending into the active region perpendicularly to said front face. The first conductive region is located between and is insulated from the monolithic conductive region and a second conductive region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.