Thin film transistor and manufacturing method thereof and display device
US11164951B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 19, 2018 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Nov 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a thin film transistor and a manufacturing method thereof, a flexible display screen and a display device. The thin film transistor is disposed on a substrate. The thin film transistor includes: an active layer, a source-drain conductive layer, and a gate conductive layer. The gate conductive layer includes a gate electrode, and the gate conductive layer is disposed on one side of the active layer away from the substrate and insulated from the active layer. The source-drain conductive layer includes a first electrode and a second electrode. The orthogonal projections of the first electrode, the gate electrode, and the second electrode on the substrate are sequentially nested from inside to outside and separately disposed. The reliability of image display may be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.