Semiconductor device
US11164979B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2020 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Aug 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A semiconductor device includes a semiconductor substrate, a Schottky layer, a plurality of first doped regions, a plurality of second doped regions, a first conductive layer and a second conductive layer. The semiconductor substrate includes a first conductive type, and the Schottky layer is disposed on the semiconductor substrate. The first doped regions and the second doped regions include a second conductive type, and which are disposed within the semiconductor substrate. The first doped regions are in parallel and extended along a first direction, and the second doped regions are in parallel and extended along a second direction to cross the first doped regions, thereby to define a plurality of grid areas. The first conductive layer is disposed on the Schottky layer, and the second conductive layer is disposed under the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.