Method for forming a passivating electrical contact on a crystalline semiconductor substrate and device comprising such contact

US11164981B2 · kind B2 · utility

Assignees

• IMEC VZW · BE
• Katholieke Universiteit Leuven · BE

Inventors

• Jinyoun Cho · Kessel-Lo, BE
• Maria Jesus Recaman Payo · Attenrode, BE
• Maarten Debucquoy · Brugge, BE
• Jef Poortmans · Kessel-Lo, BE

Key dates

• Filing date: Feb 10, 2020
• Grant date: Nov 2, 2021
• Expiry date: Feb 10, 2040

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A method includes depositing a first layer including amorphous silicon on a surface of a substrate; depositing a second layer including metal on the first layer; and performing an annealing process at a temperature within a range of 70° C. to 200° C., thereby inducing a silicidation reaction between the first layer and the second layer and forming a third layer comprising a metal silicide in electrical contact with the substrate, resulting in a remaining part of the first layer being between the substrate and the third layer.