Patent · US Active

Method for producing a microelectronic chip to be hybridised to a second chip

US11165005B2 · kind B2 · utility

0Cited by

0References

14Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Adrien Gasse · Grenoble, FR
David Henry · Gières, FR
Bertrand Chambion · Chambéry, FR

Key dates

Filing date	Oct 16, 2017
Grant date	Nov 2, 2021
Priority date	—
Expiry date	Dec 13, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/0364
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for producing a first microelectronic chip including a layer of interest having a connection face, intended to be hybridized with a second microelectronic chip. The method including depositing a layer of adhesive on a face of the layer of interest opposite to the first connection face and fastening a handle layer to the layer of adhesive. The method also includes, prior to the steps of depositing the adhesive and fastening the handle layer, defining, on the one hand, a maximum thickness eccmax and a minimum value Eccmin and a maximum value Eccmax of the Young's modulus for the layer of adhesive, and, on the other hand, the minimum thickness ecpmin for the handle layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.