Layered metal oxide field effect material and its application
US11165031B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2018 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | May 24, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
A layered metal oxide field effect material forms a heterojunction from metal oxides with different band gaps, and defines a band gap difference (ΔE)≥1 eV. Band bending is generated at the interface of the heterojunction, such that a potential barrier is formed on the side with the larger band gap and a triangular potential well is formed on the side with the smaller band gap, and under the induction of a gate electric field, a polarized charge is generated at the interface of the heterojunction, and a large number of carriers are accumulated. Therefore, the present layered metal oxide field effect material has high carrier mobility higher than 103 cm2/V·s, and overcomes the problem that the carrier mobility of a conventional metal oxide field effect material is low, it is required to fabricate the metal oxide field effect material into a crystal phase structure with a relatively high cost, and even that a substrate thereof with a crystal phase structure is required.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.