Structure comprising a strained semiconductor layer on a heat sink
US11165220B2 · kind B2 · utility
0Cited by
1References
24Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 19, 2017 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Nov 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A structure includes a semiconductor support, a semiconductor region overlying the semiconductor support, a silicon nitride layer surrounding and straining the semiconductor region, and a metal foot separating the silicon nitride layer from the semiconductor support. The semiconductor region includes germanium. The semiconductor region can be a resonator of a laser or a waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.