RF power rectifier circuit
US11165365B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2020 |
| Grant date | Nov 2, 2021 |
| Priority date | — |
| Expiry date | Oct 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45082
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A radio-frequency (RF) power rectifier circuit is provided. The RF power rectifier circuit includes a pair of differential voltage input nodes, a pair of input transistors respectively connected to the pair of differential voltage input nodes, a current mirror including a first, a second, and a third transistors, a pair of cascode transistors electrically connected between the pair of input transistors and the first transistor, a control resistor and a control transistor, and an output node. The control resistor is electrically connected to a source of the control transistor and the ground to provide a DC bias to the control transistor, and the control transistor is electrically connected to the second transistor to provide a dynamic bias to the pair of cascode transistors. This structure can lead to an increased input voltage range and reduced power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.