Semiconductor device and method of producing a semiconductor device

US11167981B2 · kind B2 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Sabine Trupp · Saalfeld, DE
• Michael Henfling · Munich, DE
• Karl Neumeier · Taufkirchen, DE

Key dates

• Filing date: Oct 30, 2019
• Grant date: Nov 9, 2021
• Expiry date: Oct 30, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/13072
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.