Magnetic sensor bias point adjustment method
US11169226B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2019 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Mar 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different amount of TMR structures as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.