Semiconductor circuit having a depression-type NMOS transistor provided on a power supply side
US11169557B2 · kind B2 · utility
0Cited by
3References
10Claims
0Family size
Assignees
Inventor
Key dates
| Filing date | Feb 21, 2020 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Feb 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/5012
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A semiconductor circuit according to embodiments includes a circuit that includes the current source and generates the output voltage, and a voltage filter constituted by a depression-type NMOS transistor, the depression-type NMOS transistor having a source connected to a power supply side of the circuit, a gate that is grounded, and a drain to which a power supply voltage is applied. Thereby, a voltage on the power supply side of the circuit that has the current source and generates an output voltage is fixed regardless of an influence of a power supply fluctuation and suppresses a change in circuit characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.