Electron multiplier that suppresses and stabilizes a variation of a resistance value in a wide temperature range
US11170983B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2018 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Jul 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J43/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. The electron multiplier includes a resistance layer sandwiched between a substrate and a secondary electron emitting layer and configured using a Pt layer two-dimensionally formed on a layer formation surface which is coincident with or substantially parallel to a channel formation surface of the substrate. The resistance layer has a temperature characteristic within a range in which a resistance value at −60° C. is 10 times or less, and a resistance value at +60° C. is 0.25 times or more, relative to a resistance value at a temperature of 20° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.