Power module and fabrication method of the power module
US11171071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2019 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Aug 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power module includes: a plate-shaped thick copper substrate, a conductive stress relaxation metal layer disposed on the thick copper substrate, a semiconductor device disposed on the stress relaxation metal layer, and a plated layer disposed on the stress relaxation metal layer, wherein the semiconductor device is bonded to the stress relaxation metal layer via the plated layer. The thick copper substrate includes a first thick copper layer and a second thick copper layer disposed on the first thick copper layer, and the stress relaxation metal layer is disposed on the second thick copper layer. A part of the semiconductor device is embedded to be fixed to the stress relaxation metal layer. A bonded surface between the semiconductor device and the stress relaxation metal layer are integrated to each other by means of diffusion bonding or solid phase diffusion bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.