Semiconductor device structure with magnetic layer and method for forming the same
US11171085B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2018 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Jul 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate, and the substrate includes a first region and a second region. The semiconductor device structure includes a first conductive structure formed over the first region of the substrate and a bottom magnetic layer formed over the second region of the substrate. The semiconductor device structure also includes a second conductive structure formed over the bottom magnetic layer and a first insulating layer formed over a sidewall surface of the first conductive structure. The semiconductor device structure further includes a second insulating layer formed over the first insulating layer, and the second insulating layer has a stair-shaped structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.