Group IV and III-V p-type MOSFET with high hole mobility and method of manufacturing the same
US11171211B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2020 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Jun 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a p-type MOSFET includes depositing a channel material to form a channel region, forming a source region and a drain region on each side of the channel region along a first direction, depositing a gate oxide layer on the channel region along a second direction crossing the first direction, and depositing a gate electrode on the gate oxide. The channel material includes a group IV element or III-V semiconductor compound and have a diamond or zincblende cubic crystal structure. A <001> direction of the crystal structure is parallel to the second direction. Two adjacent atoms on an out-most atomic layer of the channel region along the first direction are connected to each other via a single intervening atom, and an interface between the gate oxide layer and the channel region has a surface roughness of 1 angstrom or lower.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.