Semiconductor device and manufacturing method thereof
US11171222B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2019 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | May 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method includes forming a first trench insulating film of a first depth in a substrate, forming at least one second trench insulating film that is spaced apart from the first trench insulating film and has a second depth that is greater than the first depth, forming a body region of a first conductivity type and a drift region of a second conductivity type in the substrate, forming a gate electrode overlapping the first trench insulating film, forming a source region in the body region and a drain region in the drift region, forming a silicide film on the drain region, and forming a non-silicide film between the first trench insulating film and the drain region, wherein the first trench insulating film overlaps the drift region and the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.