Middle of line gate structures

US11171237B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Yanping Shen · Saratoga Springs, US
• Halting Wang · Clifton Park, US
• Hui Zang · Guilderland, US
• Jiehui Shu · Clifton Park, US

Key dates

• Filing date: Apr 17, 2019
• Grant date: Nov 9, 2021
• Expiry date: Aug 9, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0149

Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line gate structures and methods of manufacture. The structure includes: a plurality of adjacent gate structures; a bridged gate structure composed of a plurality of the adjacent gate structures; source and drain regions adjacent to the bridged gate structure and comprising source and drain metallization features; and contacts to the bridged gate structure and the source and drain metallization features.