Thin film transistor comprising active layer having thickness difference and display apparatus comprising the same
US11171245B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2019 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Jul 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/126
Abstract
A thin film transistor includes an active layer including a channel portion; a gate electrode spaced apart from the active layer and overlapping at least a part of the active layer; and source and drain electrodes connected with the active layer and spaced apart from each other, wherein the channel portion includes, a first boundary portion connected with one of the source and drain electrodes; a second boundary portion connected with the other one of the source and drain electrodes; and a main channel portion interposed between the first boundary portion and the second boundary portion, and wherein at least a part of the second boundary portion has a thickness smaller than a thickness of the main channel portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.