Metal oxide thin film transistor and manufacturing method thereof
US11171247B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 18, 2019 |
| Grant date | Nov 9, 2021 |
| Priority date | — |
| Expiry date | Dec 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1057
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a metal oxide thin film transistor and a manufacturing method thereof. By disposing a portion of the source and a portion of the drain in the same layer as the first insulating layer, the reflection of the ultraviolet light by the source, the drain and the first insulating layer can be blocked from entering the conductive channel. Therefore, a threshold voltage shift of the metal oxide thin film transistor under irradiation of ultraviolet light to the conductive channel can be prevented, and the threshold voltage stability and display quality are improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.