Patent · US Active

Film resistor and thin-film sensor

US11177059B2 · kind B2 · utility

1Cited by

12References

15Claims

0Family size

Assignee

TDK Electronics AG · JP

Inventors

Bettina Milke · Berlin, DE
Bernhard Ostrick · Teltow, DE

Key dates

Filing date	Apr 12, 2018
Grant date	Nov 16, 2021
Priority date	—
Expiry date	Jan 5, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01C17/06
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A film resistor and a film sensor are disclosed. In an embodiment a film resistor includes a piezoresistive layer comprising a M1+nAXn phase, wherein M comprises at least one transition metal, A comprises a main-group element, and X comprises carbon and/or nitrogen, and wherein n=1, 2 or 3.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.