Large area passive micro light-emitting diode matrix display
US11177245B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2020 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Jul 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A large area passive micro light-emitting diode matrix display includes a plurality of micro light-emitting diode matrices and an external circuit component. Each of the micro light-emitting diode matrices includes a first layer, a plurality of light-emitting layers disposed on the first layer, a plurality of second layers disposed on the light-emitting layers, respectively, a plurality of first inner electrode layers disposed on the second layers, respectively, and a second inner electrode layer which is disposed on the first layer, and which includes a first portion and a second portion having a plurality of through holes to accommodate said light-emitting layers, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.