Thin film transistor, fabrication method therefor, and array substrate
US11177287B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Apr 27, 2018 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Jul 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
Abstract
The present disclosure provides a thin film transistor and a fabrication method thereof, and an array substrate. The thin film transistor formed on a base substrate, the thin film transistor includes: an active layer; a first signal metal layer, provided on a surface of the active layer facing the base substrate; a second signal metal layer, provided on a surface of the active layer facing away from the first signal metal layer, wherein, the active layer includes a conductive channel formation region, and the second signal metal layer does not cover the conductive channel formation region of the active layer.
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