Semiconductor device
US11177357B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 4, 2020 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Sep 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A semiconductor device includes a semiconductor part, first and second electrodes and a control electrode. The semiconductor part is provided between the first and second electrode. The control electrode is provided in a trench between the semiconductor part and the second electrode. The semiconductor part includes first and second layers. Between the first layer of a first conductivity type and the second electrode, the second layer of a second conductivity type is provided. The second electrode includes first and second contact portions. The first contact portion extends into the second layer. The second contact portion contacts a surface of the semiconductor part. In the second layer, the first contact portion has a first width at a first position and a second width at a second position. The first position is positioned between the first electrode and the second position. The first width is larger than the second width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.