Wide bandgap semiconductor switching device with wide area schottky junction, and manufacturing process thereof
US11177394B2 · kind B2 · utility
0Cited by
6References
21Claims
0Family size
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Key dates
| Filing date | Apr 6, 2020 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Apr 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.