Photosensitive field-effect transistor

US11177411B2 · kind B2 · utility

Assignee

• EMBERION OY · FI

Inventors

• Sami Kallioinen · Espoo, FI
• Martti Voutilainen · Espoo, FI

Key dates

• Filing date: Oct 23, 2018
• Grant date: Nov 16, 2021
• Expiry date: Oct 23, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A photosensitive field-effect transistor comprising a substrate with a source electrode, a drain electrode and a gate electrode. The transistor comprises a photoactive layer which at least partly covers the gate electrode, and a channel layer which covers the photoactive layer and at least partly covers both the source electrode and the drain electrode. The channel layer comprises a two-dimensional material whose conductivity is modulated by charge carriers transferred from the photoactive layer when electromagnetic radiation is absorbed in the photoactive layer.