Low-temperature high-performance thermoelectric material and preparation method thereof

US11177426B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Jing Jiang · Beijing, CN
• Yan Pan · Sichuan, CN
• Yi Niu · Sichuan, CN
• Ting Zhou · Shanghai, CN
• Rui Zhang · Hubei, CN
• Xinrui He · Sichuan, CN
• Chao Wang · Tainan, TW

Key dates

• Filing date: May 22, 2019
• Grant date: Nov 16, 2021
• Expiry date: Aug 26, 2039

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P20/129
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A low-temperature high-performance thermoelectric material possesses a chemical formula of (AgyCu2−y)1−xTe1−zSez, wherein −0.025≤x≤0.075, 0.6≤y≤1.4, 0<z≤0.25, diffraction peaks of a main phase of the thermoelectric material are indexed as a cubic structure at room temperature of 300 K, a highest ZT value between 300 K and 673 K is in range of 0.4 to 1.6, an average ZT value (ZT)avg is in range of 0.2 to 1.4. The highest ZT value of this material at the room temperature is comparable to that of Bi2Te3, which is an excellent complement to existing low-temperature thermoelectric materials. At the same time, the present invention also indicates a new strategy to improve the low-temperature thermoelectric performance of Cu2X-based (here, X is S, Se, Te) materials, and lays a foundation for the application of Cu2X-based materials in the field of low-temperature thermoelectricity.