Method of growing titanium nitride on silicon substrate free from silicon nitride interface by using a titanium seed layer
US11177549B2 · kind B2 · utility
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26Claims
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Key dates
| Filing date | Nov 6, 2019 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Jun 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0241
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A titanium (Ti) seed layer is formed from a Ti source directly on a surface of a substrate, where the surface is substantially free of oxide and nitride, and a reactive nitrogen species is introduced from a nitrogen plasma source and additional Ti is introduced from the Ti source, wherein the nitrogen plasma: (a) reacts with the Ti seed layer to form TiN and (b) reacts with the additional Ti to form additional TiN. The TiN and additional TiN collectively form a TiN superconducting layer that directly contacts the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.