Solid-state image sensor and imaging device
US11178350B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2018 |
| Grant date | Nov 16, 2021 |
| Priority date | — |
| Expiry date | Jul 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/79
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
It makes it easier to reduce the line capacitance of vertical signal lines in a solid-state image sensor in which signals are output via the vertical signal lines.The solid-state image sensor is provided with a logic circuit, a pixel circuit, and a negative capacitance circuit. In the solid-state image sensor, the logic circuit processes an analog signal. Also, in the solid-state image sensor, the pixel circuit generates an analog signal by photoelectric conversion, and outputs the analog signal to the logic circuit via a predetermined signal line. In the solid-state image sensor, the negative capacitance circuit is connected to the predetermined signal line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.