Process for the generation of thin inorganic films

US11180852B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Torben Adermann · Ludwigshafen, DE
• Falko Abels · Ludwigshafen, DE
• Carolin Limburg · Ludwigshafen, DE
• Hagen Wilmer · Ludwigshafen, DE
• Jan Gerkens · Oettingen, DE
• Sven Schneider · Oettingen, DE

Key dates

• Filing date: Aug 23, 2017
• Grant date: Nov 23, 2021
• Expiry date: Mar 20, 2038

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/18
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.