Method for passivating silicon carbide epitaxial layer

US11183385B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS · CN

Inventors

• Jia Li · Shijiazhuang, CN
• Weili Lu · Shijiazhuang, CN
• Yulong Fang · Shijiazhuang, CN
• Jiayun Yin · Shijiazhuang, CN
• Bo Wang · Tuji, CN
• Yanmin Guo · Shijiazhuang, CN
• Zhirong Zhang · Nanhu, CN
• Zhihong Feng · Shijiazhuang, CN

Key dates

• Filing date: Mar 19, 2018
• Grant date: Nov 23, 2021
• Expiry date: Mar 19, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/049
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The disclosure provides a method for passivating a silicon carbide epitaxial layer, relating to the technical field of semiconductors. The method includes the following steps: introducing a carbon source and a silicon source into a reaction chamber, and growing a silicon carbide epitaxial layer on a substrate; and turning off the carbon source, introducing a nitrogen source and a silicon source into the reaction chamber, and growing a silicon nitride thin film on an upper surface of the silicon carbide epitaxial layer. The silicon nitride thin film grown by the method has few defects and high quality, and may be used as a lower dielectric layer of a gate electrode in a field effect transistor. It does not additionally need an oxidation process to form a SiO2 dielectric layer, thereby reducing device fabrication procedures.