Method for manufacturing semiconductor devices and structures thereof
US11183392B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2020 |
| Grant date | Nov 23, 2021 |
| Priority date | — |
| Expiry date | Apr 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to an embodiment of the present disclosure, a method of manufacturing semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; depositing a protection layer over the line-end cut pattern; etching the protection layer and exposing upper portion of the line-end cut pattern; reducing a width of the line-end cut pattern; etching the spacer layer to expose the first mandrel and the second mandrel; and patterning the mask layer using the etched spacer layer and the reduced line-end cut pattern as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.