Transfering informations across a high voltage gap using capacitive coupling with DTI integrated in silicon technology

US11183452B1 · kind B1 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Lars Mueller-Meskamp · Dresden, DE
• Berthold Astegher · Klagenfurt, AT
• Hermann Gruber · Leverkusen, DE
• Thomas Neidhart · Klagenfurt, AT

Key dates

• Filing date: Aug 12, 2020
• Grant date: Nov 23, 2021
• Expiry date: Aug 12, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/665
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A multi-voltage domain device includes a semiconductor layer including a first main surface, a second main surface arranged opposite to the first main surface, a first region including first circuitry that operates in a first voltage domain, a second region including second circuitry that operates in a second voltage domain different than the first voltage domain, and an isolation region that electrically isolates the first region from the second region in a lateral direction that extends parallel to the first and the second main surfaces. The isolation region includes at least one deep trench isolation barrier, each of which extends vertically from the first main surface to the second main surface. The multi-voltage domain device further includes at least one first capacitor configured to generate an electric field laterally across the isolation region between the first region and the second region.