Imaging element, method of manufacturing imaging element, and imaging device
US11183540B2 · kind B2 · utility
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Key dates
| Filing date | May 5, 2020 |
| Grant date | Nov 23, 2021 |
| Priority date | — |
| Expiry date | May 5, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×1010 s−1 to 1×1016 s−1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.